The 11th edition of Electronic Devices and Circuit Theory By Robert Boylestad and Louis Nashelsky offers students complete, comprehensive coverage of the subject, focusing on all the essentials they will need to succeed on the job. Setting the standard for nearly 30 years, this highly accurate text is supported by strong pedagogy and content that is ideal for new students of this rapidly changing field. This text is an excellent reference work for anyone involved with electronic devices and other circuitry applications, such as electrical and technical engineers.
Book Overviews
- Book Name – Electronic Devices and Circuit Theory By Robert Boylestad and Louis Nashelsky
- Author – Robert Boylestad and Louis Nashelsky
- Publisher – Pearson Education India
- Edition – 11th
- Language – English
- Paperback – 952 Pages
Book Contents
CHAPTER 1: Semiconductor Diodes
1.1 Introduction
1.2 Semiconductor Materials: Ge, Si, and GaAs
1.3 Covalent Bonding and Intrinsic Materials
1.4 Energy Levels
1.5 n -Type and p -Type Materials
1.6 Semiconductor Diode
1.7 Ideal Versus Practical
1.8 Resistance Levels
1.9 Diode Equivalent Circuits
1.10 Transition and Diffusion Capacitance
1.11 Reverse Recovery Time
1.12 Diode Specification Sheets
1.13 Semiconductor Diode Notation
1.14 Diode Testing
1.15 Zener Diodes
1.16 Light-Emitting Diodes
1.17 Summary
1.18 Computer Analysis
CHAPTER 2: Diode Applications
2.1 Introduction
2.2 Load-Line Analysis
2.3 Series Diode Configurations
2.4 Parallel and Series–Parallel Configurations
2.5 AND/OR Gates
2.6 Sinusoidal Inputs; Half-Wave Rectification
2.7 Full-Wave Rectification
2.8 Clippers
2.9 Clampers
2.10 Networks with a dc and ac Source
2.11 Zener Diodes
2.12 Voltage-Multiplier Circuits
2.13 Practical Applications
2.14 Summary
2.15 Computer Analysis
CHAPTER 3: Bipolar Junction Transistors
3.1 Introduction 129
3.2 Transistor Construction 130
3.3 Transistor Operation 130
3.4 Common-Base Configuration 131
3.5 Common-Emitter Configuration 136
3.6 Common-Collector Configuration 143
3.7 Limits of Operation 144
3.8 Transistor Specification Sheet 145
3.9 Transistor Testing 149
3.10 Transistor Casing and Terminal Identification 151
3.11 Transistor Development 152
3.12 Summary 154
3.13 Computer Analysis
CHAPTER 4: DC Biasing—BJTs
4.1 Introduction 160
4.2 Operating Point 161
4.3 Fixed-Bias Configuration 163
4.4 Emitter-Bias Configuration 169
4.5 Voltage-Divider Bias Configuration 175
4.6 Collector Feedback Configuration 181
4.7 Emitter-Follower Configuration 186
4.8 Common-Base Configuration 187
4.9 Miscellaneous Bias Configurations 189
4.10 Summary Table 192
4.11 Design Operations 194
4.12 Multiple BJT Networks 199
4.13 Current Mirrors 205
4.14 Current Source Circuits 208
4.15 pnp Transistors 210
4.16 Transistor Switching Networks 211
4.17 Troubleshooting Techniques 215
4.18 Bias Stabilization 217
4.19 Practical Applications 226
4.20 Summary 233
4.21 Computer Analysis 235
CHAPTER 5: BJT AC Analysis
5.1 Introduction 253
5.2 Amplification in the AC Domain 253
5.3 BJT Transistor Modeling 254
5.4 The r e Transistor Model 257
5.5 Common-Emitter Fixed-Bias Configuration 262
5.6 Voltage-Divider Bias 265
5.7 CE Emitter-Bias Configuration 267
5.8 Emitter-Follower Configuration 273
5.9 Common-Base Configuration 277
5.10 Collector Feedback Configuration 279
5.11 Collector DC Feedback Configuration 284
5.12 Effect of R L and R s 286
5.13 Determining the Current Gain 291
5.14 Summary Tables 292
5.15 Two-Port Systems Approach 292
5.16 Cascaded Systems 300
5.17 Darlington Connection 305
5.18 Feedback Pair 314
5.19 The Hybrid Equivalent Model 319
5.20 Approximate Hybrid Equivalent Circuit 324
5.21 Complete Hybrid Equivalent Model 330
5.22 Hybrid p Model 337
5.23 Variations of Transistor Parameters 338
5.24 Troubleshooting 340
5.25 Practical Applications 342
5.26 Summary 349
5.27 Computer Analysis 352
CHAPTER 6: Field-Effect Transistors
6.1 Introduction 378
6.2 Construction and Characteristics of JFETs 379
6.3 Transfer Characteristics 386 6.4 Specification Sheets (JFETs) 390
6.5 Instrumentation 394
6.6 Important Relationships 395
6.7 Depletion-Type MOSFET 396
6.8 Enhancement-Type MOSFET 402
6.9 MOSFET Handling 409
6.10 VMOS and UMOS Power and MOSFETs 410
6.11 CMOS 411
6.12 MESFETs 412
6.13 Summary Table 414
6.14 Summary 414
6.15 Computer Analysis 416
CHAPTER 7: FET Biasing
7.1 Introduction 422
7.2 Fixed-Bias Configuration 423
7.3 Self-Bias Configuration 427
7.4 Voltage-Divider Biasing 431
7.5 Common-Gate Configuration 436
7.6 Special Case VGSQ 0 V 439
7.7 Depletion-Type MOSFETs 439
7.8 Enhancement-Type MOSFETs 443
7.9 Summary Table 449
7.10 Combination Networks 449
7.11 Design 452
7.12 Troubleshooting 455
7.13 p-Channel FETs 455
7.14 Universal JFET Bias Curve 458
7.15 Practical Applications 461
7.16 Summary 470
7.17 Computer Analysis 471
CHAPTER 8: FET Amplifiers
8.1 Introduction 481
8.2 JFET Small-Signal Model 482
8.3 Fixed-Bias Configuration 489
8.4 Self-Bias Configuration 492
8.5 Voltage-Divider Configuration 497
8.6 Common-Gate Configuration 498
8.7 Source-Follower (Common-Drain) Configuration 501
8.8 Depletion-Type MOSFETs 505
8.9 Enhancement-Type MOSFETs 506
8.10 E-MOSFET Drain-Feedback Configuration 507
8.11 E-MOSFET Voltage-Divider Configuration 510
8.12 Designing FET Amplifier Networks 511
8.13 Summary Table 513
8.14 Effect of RL and Rsig 516
8.15 Cascade Configuration 518
8.16 Troubleshooting 521
8.17 Practical Applications 522
8.18 Summary 530
8.19 Computer Analysis 531
CHAPTER 9: BJT and JFET Frequency Response
9.1 Introduction 545
9.2 Logarithms 545
9.3 Decibels 550
9.4 General Frequency Considerations 554
9.5 Normalization Process 557
9.6 Low-Frequency Analysis—Bode Plot 559
9.7 Low-Frequency Response—BJT Amplifier with RL 564
9.8 Impact of R s on the BJT Low-Frequency Response 568
9.9 Low-Frequency Response—FET Amplifier 571
9.10 Miller Effect Capacitance 574
9.11 High-Frequency Response—BJT Amplifier 576
9.12 High-Frequency Response—FET Amplifier 584
9.13 Multistage Frequency Effects 586
9.14 Square-Wave Testing 588
9.15 Summary 591
9.16 Computer Analysis 592
CHAPTER 10: Operational Amplifiers
10.1 Introduction 607
10.2 Differential Amplifier Circuit 610
10.3 BiFET, BiMOS, and CMOS Differential Amplifier Circuits 617
10.4 Op-Amp Basics 620
10.5 Practical Op-Amp Circuits 623
10.6 Op-Amp Specifications—DC Offset Parameters 628
10.7 Op-Amp Specifications—Frequency Parameters 631
10.8 Op-Amp Unit Specifications 634
10.9 Differential and Common-Mode Operation 639
10.10 Summary 643
10.11 Computer Analysis 644
CHAPTER 11: Op-Amp Applications
11.1 Constant-Gain Multiplier 653
11.2 Voltage Summing 657
11.3 Voltage Buffer 660
11.4 Controlled Sources 661
11.5 Instrumentation Circuits 663
11.6 Active Filters 667
11.7 Summary 670
11.8 Computer Analysis 671
CHAPTER 12: Power Amplifiers
12.1 Introduction—Definitions and Amplifier Types 683
12.2 Series-Fed Class A Amplifier 685
12.3 Transformer-Coupled Class A Amplifier 688
12.4 Class B Amplifier Operation 695
12.5 Class B Amplifier Circuits 699
12.6 Amplifier Distortion 705
12.7 Power Transistor Heat Sinking 709
12.8 Class C and Class D Amplifiers 712
12.9 Summary 714
12.10 Computer Analysis 715
CHAPTER 13: Linear-Digital ICs
13.1 Introduction 722
13.2 Comparator Unit Operation 722
13.3 Digital–Analog Converters 729
13.4 Timer IC Unit Operation 732
13.5 Voltage-Controlled Oscillator 736
13.6 Phase-Locked Loop 738
13.7 Interfacing Circuitry 742
13.8 Summary 745
13.9 Computer Analysis 745
CHAPTER 14: Feedback and Oscillator Circuits
14.1 Feedback Concepts 751
14.2 Feedback Connection Types 752
14.3 Practical Feedback Circuits 758
14.4 Feedback Amplifier—Phase and Frequency Considerations 763
14.5 Oscillator Operation 766
14.6 Phase-Shift Oscillator 767
14.7 Wien Bridge Oscillator 770
14.8 Tuned Oscillator Circuit 771
14.9 Crystal Oscillator 774
14.10 Unijunction Oscillator 777
14.11 Summary 778
14.12 Computer Analysis 779
CHAPTER 15: Power Supplies (Voltage Regulators)
15.1 Introduction 783
15.2 General Filter Considerations 784
15.3 Capacitor Filter 786
15.4 RC Filter 789
15.5 Discrete Transistor Voltage Regulation 791
15.6 IC Voltage Regulators 798
15.7 Practical Applications 803
15.8 Summary 805
15.9 Computer Analysis 806
CHAPTER 16: Other Two-Terminal Devices
16.1 Introduction 811
16.2 Schottky Barrier (Hot-Carrier) Diodes 811
16.3 Varactor (Varicap) Diodes 815
16.4 Solar Cells 819
16.5 Photodiodes 824
16.6 Photoconductive Cells 826
16.7 IR Emitters 828
16.8 Liquid-Crystal Displays 829
16.9 Thermistors 831
16.10 Tunnel Diodes 833
16.11 Summary 837
CHAPTER 17: pnpn and Other Devices
17.1 Introduction 841
17.2 Silicon-Controlled Rectifier 841
17.3 Basic Silicon-Controlled Rectifier Operation 842
17.4 SCR Characteristics and Ratings 843
17.5 SCR Applications 845
17.6 Silicon-Controlled Switch 849
17.7 Gate Turn-Off Switch 851
17.8 Light-Activated SCR 852
17.9 Shockley Diode 854 17.
10 Diac 854
17.11 Triac 856
17.12 Unijunction Transistor 857
17.13 Phototransistors 865
17.14 Opto-Isolators 867
17.15 Programmable Unijunction Transistor 869
17.16 Summary 874
Appendix A: Hybrid Parameters—Graphical Determinations and Conversion Equations (Exact and Approximate)
A.1 Graphical Determination of the h-Parameters 879
A.2 Exact Conversion Equations 883
A.3 Approximate Conversion Equations 883
Appendix B: Ripple Factor and Voltage Calculations
B.1 Ripple Factor of Rectifier 885
B.2 Ripple Voltage of Capacitor Filter 886
B.3 Relation of Vdc and V m to Ripple r 887
B.4 Relation of V r(rms) and V m to Ripple r 888
B.5 Relation Connecting Conduction Angle, Percentage Ripple, and Ipeak/Idc for Rectifier-Capacitor Filter Circuits 889
Appendix C: Charts and Tables
Appendix D: Solutions to Selected Odd-Numbered Problems
Index
